FERROELECTRIC-GATE FIELD EFFEC
Gewicht:
750 g
Format:
244x161x25 mm
Beschreibung:
This book provides comprehensive coverage of the materials characteristics, process technologies, and device operations for memory field-effect transistors employing inorganic or organic ferroelectric thin films. This transistor-type ferroelectric memory has interesting fundamental device physics and potentially large industrial impact.
Describes the development history, materials, fabrication methodologies, technical challenges and promising applications of FET-type ferroelectric memory devices
PrefaceI. Operation Principle of One-Transistor Type Ferroelectric-gate Field Effect Transistors
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