Defects and Impurities in Silicon Materials
An Introduction to Atomic-Level Silicon Engineering
Paperback
Sofort lieferbar | Lieferzeit: Sofort lieferbar I
82,01 €*
Alle Preise inkl. MwSt.|Versandkostenfrei
ISBN-13:
9784431557999
Veröffentl:
2016
Einband:
Paperback
Erscheinungsdatum:
31.03.2016
Seiten:
504
Autor:
Guido Langouche
Gewicht:
848 g
Format:
235x155x26 mm
Serie:
916, Lecture Notes in Physics
Sprache:
Englisch
Beschreibung:
This book emphasizesthe importance of the fascinating atomistic insights into the defects and theimpurities as well as the dynamic behaviors in silicon materials, which havebecome more directly accessible over the past 20 years. Such progress has beenmade possible by newly developed experimental methods, first principle theoriesand computer simulation techniques.
Provides the basic physics behind the modeling and evaluation techniques used in silicon materials science
Diffusion and point defects in silicon materials.- Density functional modeling of defects and impurities in silicon materials.- Electrical and optical defect evaluation techniques for electronic and solar grade silicon.- Intrinsic point defect engineering during single crystal Si and Ge growth from a melt.- Computer simulation of crystal growth for CZ-Si single crystals and Si solar cells.- Oxygen precipitation in silicon.- Defect characterization by electron beam induced current and cathode luminescence methods.- Nuclear methods to study defects and impurities in Si materials using heavy ion accelerators.- Defect Engineering in silicon materials.
Kunden Rezensionen
Mehr zum Thema
Folgen Sie uns auf:
