Subthreshold Surface Potential Model for Short-Channel Mosfet
Using Pseudo 2d Analysis
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ISBN-13:
9783659126093
Veröffentl:
2014
Einband:
Paperback
Erscheinungsdatum:
27.02.2014
Seiten:
84
Autor:
Angsuman Sarkar
Gewicht:
143 g
Format:
220x150x6 mm
Sprache:
Englisch
Beschreibung:
As a result of aggressive downscaling, short-channel effects (SCEs) become a major threat for future downscaling especially in the sub-100nm region. In order to extend the International Technology Road-map for Semiconductors (ITRS) road-map beyond 100nm, Double-Gate (DG) MOSFET evinces himself as a major promising candidate due to its higher scaling capability. In this book, modelling using a pseudo- two-dimensional (2D) analysis was presented to explore the effect of scaling especially for subthreshold characteristics of short-channel DG and conventional single gate MOSFET.
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