Beschreibung:
This book describes the basic technologies and operation principles of charge-trapping non-volatile memories. The authors explain the device physics of each device architecture and provide a concrete description of the materials involved as well as the fundamental properties of the technology. Modern material properties used as charge-trapping layers, for new applications are introduced.
Preface.- Introduction to NVM devices.- A synopsis on the state of the art of NAND memories.- Charge-trap memories with ion beam modified ONO stacks.- 3D NAND Flash Architectures.- Quantum dot Nonvolatile Memories.- Two-Terminal Organic Memories with Metal or Semiconductor Nanoparticles.