This book reviews a range of quantum phenomena in novel nanoscale transistors called FinFETs, including quantized conductance of 1D transport, single electron effect, tunneling transport, etc. The goal is to create a fundamental bridge between quantum FinFET and nanotechnology to stimulate readers' interest in developing new types of semiconductor technology. Although the rapid development of micro-nano fabrication is driving the MOSFET downscaling trend that is evolving from planar channel to nonplanar FinFET, silicon-based CMOS technology is expected to face fundamental limits in the near future. Therefore, new types of nanoscale devices are being investigated aggressively to take advantage of the quantum effect in carrier transport. The quantum confinement effect of FinFET at room temperatures was reported following the breakthrough to sub-10nm scale technology in silicon nanowires. With chapters written by leading scientists throughout the world, Toward Quantum FinFET provides a comprehensive introduction to the field as well as a platform for knowledge sharing and dissemination of the latest advances. As a  roadmap to guide further research in an area of increasing importance for the future development of materials science, nanofabrication technology, and nano-electronic devices, the book can be recommended for Physics, Electrical Engineering, and Materials Science departments, and as a reference on micro-nano electronic science and device design.

PrefaceChapter 1: Simulation of Quantum Ballistic Transport in FinFETsChapter 2: Model for quantum confinement in nanowires and the application of this model to the study of carrier mobility in nanowire FinFETsChapter 3: Understanding the FinFET Mobility by Systematic ExperimentsChapter 4: Quantum Mechanical Potential Modeling of FinFETChapter 5: Physical insight and correlation analysis of finshape fluctuations and work-function variability in FinFET devicesChapter 6: Characteristic and Fluctuation of Multi-Fin FinFETsChapter 7: Variability in Nanoscale FinFET TechnologiesChapter 8: Random Telegraph Noise in Multi-Gate FinFET/Nanowire Devices and the Impact of Quantum ConfinementChapter 9: Investigations on Transport Properties of Poly-Silicon Nanowire Transistors Featuring Independent Double-Gated Configuration under Cryogenic AmbientChapter 10: Towards Drain extended FinFETs for SoC applicationsChapter 11: Modeling FinFETs for CMOS ApplicationsChapter 12: Enhanced Quantum Effects in Room-Temperature Coulomb Blockade Devices Based on Ultrascaled finFET StructureChapter 13: Single-Electron Tunneling Transistors Utilizing Individual Dopant PotentialsChapter 14: Single Electron Transistor and Quantum Dots on GrapheneChapter 15: Terahertz Response in Schottky Warp-Gate Controlled Single Electron TransistorsIndex