Beschreibung:
This book relates the recent developments in several key electrical engineering R&D labs, concentrating on power electronics switches and their use. The first sections deal with key power electronics technologies, MOSFETs and IGBTs, including series and parallel associations. The next section examines silicon carbide and its potentiality for power electronics applications and its present limitations. Then, a dedicated section presents the capacitors, key passive components in power electronics, followed by a modeling method allowing the stray inductances computation, necessary for the precise simulation of switching waveforms. Thermal behavior associated with power switches follows, and the last part proposes some interesting prospectives associated to Power Electronics integration.
1. Power MOSFET transistors, Pierre Aloisi.2. Insulated gate bipolar transistors (IGBT), Pierre Aloisi.3. Serial or paralleled connected power transistors, Daniel Chatroux, Jean-Luc Schanen.4. Silicon carbide devices and their applications, Marie-Laure Locatelli, Dominique Planson.5. Capacitors for power electronics, Abderrahmane Beroual, Sophie Guillemet-Fritsch, Thierry Lebey.6. Interconnection modeling, Edith Clavel, Francois Costa, Cyrille Gautier, Arnaud Guena, James Roudet, Jean-Luc Schanen.7. Switching cell definition James Roudet, Jean-Luc Schanen.8. Electrothermal behavior of power electronics switches, Corinne Perret, Robert Perret.9. Functional integration for the design of new power switches, Patrick Austin, Marie Breil, Jean-Louis Sanchez.