The fast-developing information technology industry is driving a need for new materials in order to facilitate the development of more reliable microelectronic products.

"The fast-developing information technology industry is driving a need for new materials to facilitate the development of more reliable microelectronic products.

Recent Advances in Thin-film Deposition.- Molecular-beam Deposition of High-k Gate Dielectrics for Advanced CMOS.- LEPECVD - A Production Technique for SiGe MOSFETs and MODFETs.- Thin-film Engineering by Atomic-layer Deposition for Ultra-scaled and Novel Devices.- Atomic-layer Deposited Barrier and Seed Layers for Interconnects.- Copper CVD for Conformal Ultrathin-film Deposition.- Pushing PVD to the Limits - Recent Advances.- Surface Engineering Using Self-assembled Monolayers: Model Substrates for Atomic-layer Deposition.- Selective Airgaps: Towards a Scalable Low-k Solution.- Silicides - Recent Advances and Prospects.- TEM Characterization of Strained Silicon.- Material Aspects of Non-Volatile Memories.- An Introduction to Nonvolatile Memory Technology.- Floating-dot Memory Transistors on SOI Substrate.- Ion-beam Synthesis of Nanocrystals for Multidot Memory Structures.- Scaling of Ferroelectric-based Memory Concepts.- Device Concepts with Magnetic Tunnel Junctions.- Phase-change Memories.- Amorphous-to-fcc Transition in GeSbTe Alloys.- Organic Nonvolatile Memories.- Materials for Interconnects.- Interconnect Technology - Today, Recent Advances and a Look into the Future.- Dielectric and Scaling Effects on Electromigration for Cu Interconnects.- Texture and Stress Study of Sub-Micron Copper Interconnect Lines Using X-ray Microdiffraction.- Stress Modeling for Copper Interconnect Structures.- Conductivity Enhancement in Metallization Structures of Regular Grains.- Advanced Barriers for Copper Interconnects.- Synthesis and Characterization of Compounds Obtained by Crosslinking of Polymethylhydrosiloxane by Aromatic Rings.- Revealing the Porous Structure of Low-k Materials Through Solvent Diffusion.- Carbon Nanotube Via Technologies for Future LSIInterconnects.- Nickel Nanowires Obtained by Template Synthesis.- Materials for Assembly/Packaging.- The Importance of Polymers in Wafer-Level Packaging.- Electrically Conductive Adhesives as Solder Alternative: A Feasible Challenge.- The Role of Au/Sn Solder in Packaging.- Packaging Materials: Organic-Inorganic Hybrids for Millimetre-Wave Optoelectronics.- Wafer-Level Three-Dimensional Hyper-Integration Technology Using Dielectric Adhesive Wafer Bonding.- Advanced Materials Characterization.- Challenges to Advanced Materials Characterization for ULSI Applications.- Advanced Material Characterization by TOFSIMS in Microelectronic.- Electronic Properties of the Interface Formed by Pr2O3 Growth on Si(001), Si(111) and SiC(0001) Surfaces.- Materials Characterization by Ellipsometry.- Thermal Desorption Spectrometry as a Method of Analysis for Advanced Interconnect Materials.- Electron Backscatter Diffraction: Application to Cu Interconnects in Top-View and Cross Section.- X-ray Reflectivity Characterisation of Thin-Film and Multilayer Structures.