Applied Atomic Collision Physics, Volume 4: Condensed Matter deals with the fundamental knowledge of collision processes in condensed media.The book focuses on the range of applications of atomic collisions in condensed matter, extending from effects on biological systems to the characterization and modification of solids. This volume begins with the description of some aspects of the physics involved in the production of ion beams. The radiation effects in biological and chemical systems, ion scattering and atomic diffraction, x-ray fluorescence analysis, and photoelectron and Auger spectroscopy are discussed in detail. The final two chapters in the text cover two areas of ion beam materials modification: ion implantation in semiconductors and microfabrication. This text is a good reference material for physics graduate students, experimental and theoretical physicists, and chemists.

List of ContributorsTreatise PrefacePreface1 Heavy Ion Charge States I. Introduction II. Basic Processes and Mathematical Description of Charge Exchange III. Experimental Aspects IV. Electron Capture V. Electron Loss VI. Equilibrium Charge-State Distributions VII. Gas and Solid Effects References2 Ionization Phenomena and Sources of Ions I. Introduction II. Ion Source Selection Considerations III. Vapor Transport Methods IV. Positive Ionization Phenomena and Sources V. Negative Ionization Phenomena and Sources VI. Ion Extraction and Optics of the Extraction Region References3 Radiation Physics as a Basis of Radiation Chemistry and Biology I. What are the Problems of Radiation Physics? II. Problems of Class I: How Do Radiations Degrade in Matter? III. Problems of Class II: How Does Matter Change after Receiving Energy from Radiation? IV. Some Notions of Radiation Chemistry and Biology V. Concluding Remarks References4 Low Energy Ion Scattering and Atomic Diffraction I. Ion Scattering Spectrometry (ISS) II. Scattering of Atomic Beams at Thermal Energies References5 High Energy Ion Scattering I. Introduction II. Physics of Ion Scattering in Amorphous Solids III. Atomic Composition of Surface Layers IV. MeV Ion Scattering in Single Crystals V. Structure Analysis in Crystalline Solids VI. Summary References6 Inelastic Surface Collisions I. Introduction II. Ion-Induced Auger Spectra III. Ion Neutralization at Surfaces IV. Excitation of Projectiles V. Optical Emission for Target Species VI. Conclusion References7 Secondary Ion Mass Spectrometry I. Introduction II. The Sputtering Process III. Sputtered Ion Emission: Phenomena and Models IV. Instrumentation V. Applications of Secondary Ion Mass Spectrometry VI. Conclusion References8 The Time-of-Flight Atom Probe and Field Ion Microscopy I. Introduction II. Basic Principles III. Field Ion Microscope and Atom-Probe FIM IV. Atomic Processes on Solid Surfaces V. Atom-Probe Analyses VI. Summary References9 Ion-Induced X-Ray Emission I. Introduction II. Coulomb Ionization III. Proton-Induced X-Ray Emission (PIXE) IV. Heavy-Ion-Induced X-Ray Emission References10 X-Ray Fluorescence Analysis I. Introduction II. Development of the Physics III. Development of the Analytical Application IV. Comparison to Other Analytical Techniques V. X-Ray Fluorescence Analysis in Industry VI. Conclusions References11 Photoelectron and Auger Spectroscopy I. Introduction II. Description of the Processes III. Experimental Considerations IV. Applications References12 Ion Implantation in Semiconductors I. Introduction II. Depth Distributions in Implanted and Annealed Samples III. Implantation Damage IV. Electrical Activity V. Recoil Implantation VI. Annealing of Disorder by Irradiation VII. Summary References13 Microfabrication I. Introduction II. Microfabrication Processes III. Pattern Replication (Lithography) IV. Pattern Transfer V. Discussion ReferencesIndex