Beschreibung:
With IC technology continuing to advance, the analysis of very small structures remains critically important. Microscopy of Semiconducting Materials provides an overview of advances in semiconductor studies using microscopy. The book explores the use of transmission and scanning electron microscopy, ultrafine electron probes, and EELS to investigat
High resolution microscopy and microanalysis (10 papers). Dislocations and boundaries (9 papers). Self-organized and quantum domain structures (14 papers) . Epitaxy-growth phenomena (22 papers). Epitaxy-defect formation (16 papers). Epitaxy-wide band-gap nitrides (20 papers). Processed silicon and related materials (24 papers). Metallization, silicides and contacts (9 papers). Device studies and specimen preparation (7 papers). Scanning probe microscopy (6 papers). Advanced scanning electron and optical microscopy (20 papers).