This book presents the material necessary for understanding the physics, operation, design, and performance of modern MOSFETs with nanometer dimensions. It offers a brief introduction to the field and a thorough overview of MOSFET physics, detailing the relevant basics. The authors apply presented models to calculate and demonstrate transistor characteristics, and they include required input data (e.g., dimensions, doping) enabling readers to repeat the calculations and compare their results. The book introduces conventional and novel advanced MOSFET concepts, such as multiple-gate structures or alternative channel materials. Other topics covered include high-k dielectrics and mobility enhancement techniques, MOSFETs for RF (radio frequency) applications, MOSFET fabrication technology.

The Evolution of Silicon ElectronicsIntroductionThe Early Days of Semiconductor ElectronicsMoore's LawFurther trends and the ITRSImproved MOSFET DesignsMOSFETs for High-Frequency Operation?MOSFET TheoryIntroductionMOS FundamentalsMOSFET Current- Voltage CharacteristicsNanoscale MOSFETsMOSFET Scaling TheoryNanoscale MOSFET Concepts - An OverviewNanoscale Bulk MOSFETsMobility Enhancement TechniquesHigh-k Dielectrics and Metal GatesNanoscale Single-Gate SOI MOSFETsNanoscale Multiple-Gate MOSFETsMOSFETs with Alternative Channel MaterialsThe Effect of Multiple Technology BoostersMOSFETs for RF ApplicationsIntroductionRF Transistor Figures of MeritSmall-Signal Equivalent CircuitsRF MOSFET Design and PerformanceOverview of Nanometer CMOS TechnologyIntroductionLithographyPlasma EtchingThin Film Formation TechniquesJunction FormationInterconnectsSummaryOutlookIntroductionCritical Scaling IssuesWill There Be a Mainstream Beyond-Scaling, Post-CMOS Technology?Appendix A: Frequently Used SymbolsAppendix B: Physical Constants and Unit ConversionsAppendix C: Important Properties of Si and SiO2Appendix D: Carrier Concentrations, Energy, and PotentialAppendix E: Frequently Used Abbreviations