The MOCVD Challenge
Volume 2: A Survey of GaInAsP-GaAs for Photonic and Electronic Device Applications
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ISBN-13:
9780750303095
Veröffentl:
1995
Erscheinungsdatum:
01.01.1995
Seiten:
444
Autor:
Manijeh Razeghi
Gewicht:
816 g
Format:
234x156x25 mm
Sprache:
Englisch
Beschreibung:
This second volume focuses on MOCVD growth of GaAs and related alloys and GaInP for photonic and electronic applications. Coverage begins with III-V compounds and devices and growth techniques for multilayers and heterostructures. The book then details how an MOCVD system works and how design affects material growth and sourcing of precursor materials. It also examines ^Iin- and ^Iex-situ growth techniques and the GaInPGaAs system, including optical investigations of quantum wells and superlattices. The book concludes with a discussion of the current use, novel developments, and future potential for optical devices, GaAs-based lasers and heterojunctions, and optoelectronic integrated circuits.
Preface. Foreword. Introduction. Introduction to semiconductor compounds. MOCVD growth technique. ^IIn-situ characterization during MOCVD. ^IEx-situ characterization techniques. MOCVD growth of GaAs layers. Growth and characterization of the GaInP-GaAs system. Optical devices. GaAs-based lasers. GaAs-based heterojunction electron devices grown by MOCVD. Optoelectronic integrated circuits (OEICs). Appendices. Effect of substrate miscut on the measured superlattice period. Optimization of thickness and In composition of InGaAs well for 980 nm lasers. Energy levels and laser gains in a quantum well (GaInAsP): the 'effective mass approximation'. Luttinger-Kohn Hamiltonian. Infrared detectors. Index.
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